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? IRG7PG35UPBF irg7pg35u-epbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 IRG7PG35UPBF to-247ac g c e c ? g c e c irg7pg35u-epbf to-247ad g c e gate collector emitter base part number package type standard pack orderable part number form quantity IRG7PG35UPBF to-247ac tube 25 IRG7PG35UPBF irg7pg35u-epbf to-247ad tube 25 irg7pg35u-epbf v ces = 1000v i c = 35a, t c = 100c t j(max) = 175c v ce(on) typ. = 1.9v @ i c = 20a ? insulated gate bipolar transistor features ?? low v ce (on) trench igbt technology ?? low switching losses ?? square rbsoa ?? 100% of the parts tested for i lm ? ?? positive v ce (on) temperature co-efficient ?? tight parameter distribution ?? lead-free package benefits ?? high efficiency in a wide range of applications ?? suitable for a wide range of switching frequencies due to low v ce(on) and low switching losses ?? rugged transient performance for increased reliability ?? excellent current sharing in parallel operation absolute maximum ratings ?? parameter max. units v ces collector-to-emitter voltage 1000 v i c @ t c = 25c continuous collector current (silicon limited) 55 i c @ t c = 100c continuous collector current (silicon limited) 35 i cm pulse collector current, v ge = 15v ? 60 i lm clamped inductive load current, v ge = 20v ? 80 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 210 w p d @ t c = 100c maximum power dissipation 105 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) a applications ?? u.p.s. ? ?? welding ? ?? solar inverter ? ?? induction heating ? thermal resistance ??? parameter min. typ. max. units r jc (igbt) junction-to-case (igbt) ? ??? ??? 0.70 r cs case-to-sink (flat, greased surface) ??? 0.24 ??? c/w r ja junction-to-ambient (typical socket mount) ??? ??? 40 e c g n-channel ?
? IRG7PG35UPBF/irg7pg35u-epbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1000 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.2 ? v/c v ge = 0v, i c = 1.0ma (25c-150c) ? 1.9 2.2 v ? i c = 20a, v ge = 15v, t j = 25c v ce(on) collector-to-emitter saturation voltage ? 2.3 ? i c = 20a, v ge = 15v, t j = 150c ? 2.4 ? i c = 20a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 600a ? v ge(th) / ? t j gate threshold voltage temp coefficient. ? -16 ? mv/c v ce = v ge , i c = 600a (25c-150c) gfe forward transconductance ? 22 ? s v ce = 50v, i c = 20a, pw = 30s i ces collector-to-emitter leakage current ? 2.0 100 a v ge = 0v, v ce = 1000v ?? ? 2000 ? v ge = 0v, v ce = 1000v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge ? 85 ? i c = 20a q ge gate-to-emitter charge ? 15 ? nc ? v ge = 15v q gc gate-to-collector charge ? 35 ? ? v cc = 600v e on turn-on switching loss ? 1060 ? e off turn-off switching loss ? 620 ? j i c = 20a, v cc = 600v, v ge = 15v e total total switching loss ? 1680 ? r g = 10 ? , l = 200h, t j = 25c t d(on) turn-on delay time ? 30 ? energy losses include tail & diode t r rise time ? 15 ? ns reverse recovery t d(off) turn-off delay time ? 160 ? diode clamp the same as t f fall time ? 80 ? irg7ph35udpbf e on turn-on switching loss ? 1880 ? e off turn-off switching loss ? 1140 ? j i c = 20a, v cc = 600v, v ge = 15v e total total switching loss ? 3020 ? r g = 10 ? , l = 200h, t j = 175c t d(on) turn-on delay time ? 25 ? energy losses include tail & diode t r rise time ? 20 ? ns reverse recovery t d(off) turn-off delay time ? 200 ? diode clamp the same as t f fall time ? 200 ? irg7ph35udpbf c ies input capacitance ? 1940 ? v ge = 0v c oes output capacitance ? 60 ? pf v cc = 30v c res reverse transfer capacitance ? 40 ? f = 1.0mhz t j = 175c, i c = 80a rbsoa reverse bias safe operating area full square v cc = 800v, vp 1000v rg = 10 ? , v ge = +20v to 0v notes: ? v cc = 80% (v ces ), v ge = 20v, r g = 10 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j of approximately 90c.
? IRG7PG35UPBF/irg7pg35u-epbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 4 - forward soa t c = 25c, t j 175c; v ge = 15v 0.1 1 10 100 f , frequency ( khz ) 0 5 10 15 20 25 30 35 40 45 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tc = 100c gate drive as specified power dissipation = 70w i square wave: v cc diode as specified 25 50 75 100 125 150 175 t c (c) 0 10 20 30 40 50 60 i c ( a ) 0 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 p t o t ( w ) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 3 - power dissipation vs. case temperature 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc fig. 2 - maximum dc collector current vs. case temperature
? IRG7PG35UPBF/irg7pg35u-epbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 30s 4 8 12 16 20 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a fig. 7 - typ. igbt output characteristics t j = 25c; tp = 30s 51 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a fig. 10 - typical v ce vs. v ge t j = 25c fig. 8 - typ. igbt output characteristics t j = 175c; tp = 30s 51 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a fig. 11 - typical v ce vs. v ge t j = 175c fig. 9 - typical v ce vs. v ge t j = -40c
? IRG7PG35UPBF/irg7pg35u-epbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 45678910 v ge, gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 175c t j = 25c 0 10203040 i c (a) 0 1000 2000 3000 4000 e n e r g y ( j ) e off e on 0 10 20 30 40 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 12 - typ. transfer characteristics v ce = 50v; tp = 30s fig. 14 - typ. switching time vs. i c t j = 175c; l = 680h; v ce = 600v, r g = 10 ? ; v ge = 15v 0 20 40 60 80 100 r g ( ? ) 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) e on e off fig. 15 - typ. energy loss vs. r g t j = 175c; l = 680h; v ce = 600v, i ce = 20a; v ge = 15v fig. 13 - typ. energy loss vs. i c t j = 175c; l = 680h; v ce = 600v, r g = 10 ? ; v ge = 15v 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 16 - typ. switching time vs. r g t j = 175c; l = 680h; v ce = 600v, i ce = 20a; v ge = 15v 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres fig. 17 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz
? IRG7PG35UPBF/irg7pg35u-epbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig. 20 - maximum transient thermal impedance, junction-to-case (igbt) 020406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 25 50 75 100 125 150 175 t j , temperature (c) 0.4 0.6 0.8 1.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 600a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 19 - typical gate threshold voltage (normalized) vs. junction temperature fig. 18 - typical gate charge vs. v ge i ce = 20a ri (c/w) ? i (sec) ? 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
? IRG7PG35UPBF/irg7pg35u-epbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - switching loss circuit 1k vcc dut 0 l l rg 80 v dut vclamped + - l rg vcc diode clamp dut / driver fig.c.t.4 - bvces filter circuit 100 k 22k dut d1 0.0075 g force c fo rce c sen se e fo rce e sen se
? IRG7PG35UPBF/irg7pg35u-epbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 -100 0 100 200 300 400 500 600 700 800 -0.5 0.5 1.5 time(s) v ce (v) -5 0 5 10 15 20 25 30 35 40 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 700 800 -0.5 -0.3 -0.1 0.1 0.3 0.5 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 80 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ tj = 175c using fig. ct.3
? IRG7PG35UPBF/irg7pg35u-epbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 to-247ac package outline dimensions are shown in millimeters (inches) year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 to-247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ac package is not recommended for surface mount application.
? IRG7PG35UPBF/irg7pg35u-epbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 to-247ad part marking information assem bly year 0 = 2000 assem bled o n w w 35, 2000 in the assem bly line "h" exam ple: this is an irg p30b120kd-e lo t co de 5657 with assembly part number date code in t e r n a t io n a l rectifier lo g o 035h 5 6 5 7 week 35 lin e h lot code n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead-free" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-247ad package is not recommended for surface mount application. to-247ad package outline dimensions are shown in millimeters (inches)
? IRG7PG35UPBF/irg7pg35u-epbf 11 www.irf.com ? 2014 international rectifier submit datasheet feedback april 14, 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial moisture sensitivity level to-247ac to-247ad rohs compliant yes n/a ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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